Single-crystal growth of aluminum nitride on 6H-SiC substrates by an open-system sublimation method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. SiC and GaN High-Voltage Power Switching Devices
2. The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process
3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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2. Large ferroelectric photovoltaic effect of a wurtzite-structure SnC/ScN superlattice;Journal of Alloys and Compounds;2023-09
3. Selective-area growth of β-Ga2O3 nanowire films on nano-patterned Si(111) substrate by metal-organic chemical vapor deposition;Ceramics International;2023-07
4. Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN) n /(ScN) m Superlattice;physica status solidi (RRL) – Rapid Research Letters;2021-02-26
5. A study on the AlN crystal growth using its thin films grown on SiC substrate;J KOR CRYST GROWTH C;2018
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