Atomic structure of the m-plane AlN/SiC interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates
2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
3. Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
4. Molecular-beam epitaxy of p-type m-plane GaN
5. Atomic arrangement at the AlN/SiC interface
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1. Determination of atomic-scale chemical composition at semiconductor heteroepitaxial interfaces by high-resolution transmission electron microscopy;Micron;2018-03
2. Interface characteristics of cubic AlN film on MgO (100) substrate;Vacuum;2015-09
3. Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition;Acta Physica Sinica;2013
4. Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates;Journal of Crystal Growth;2010-05
5. First-principles study of 6H-AlN under various pressure conditions;Journal of Physics: Conference Series;2010-03-01
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