Comparison of structural and optical properties of GaSb/AlGaSb quantum well structures grown on different oriented Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Room Temperature CW Operation of GaSb/AlGaSb MQW Laser Diodes Grown by MBE
2. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
3. Heteroepitaxial growth of GaSb on Si(001) substrates
4. Growth and characterization of GaSb/AlGaSb multi-quantum well structures on Si (001) substrates
5. Growth and characterization of GaSb heteroepitaxial layers on Si(111) substrates
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1. First principles calculation of the structural, electronic, optical and elastic properties of the cubic Al Ga1-Sb ternary alloy;Optical Materials;2021-03
2. Low symmetry phases of (Al, Ga)Sb under low pressure;International Journal of Modern Physics B;2015-04-07
3. Surface morphology, electrical and optical properties n-type doped MOCVD grown GaSb using dimethyltellurium;International Journal of Materials Research;2011-11-01
4. Simulations of Gallium Antimonide (GaSb) p-B-n Thermophotovoltaic Cells;MRS Proceedings;2011
5. Effect of Sb template layer on GaSb thin films grown on Si(111) substrate by molecular beam epitaxy;physica status solidi (c);2010-11-15
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