Growth and characterization of GaSb heteroepitaxial layers on Si(111) substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference6 articles.
1. Room Temperature CW Operation of GaSb/AlGaSb MQW Laser Diodes Grown by MBE
2. Structural and optical characterization of GaSb layers on Si (001) substrates
3. Heteroepitaxial growth of GaSb on Si(001) substrates
4. Growth and characterization of GaSb/AlGaSb multi-quantum well structures on Si (001) substrates
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1. Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates;physica status solidi (a);2019-08-08
2. Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory;Progress in Crystal Growth and Characterization of Materials;2018-12
3. Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness;Journal of Applied Physics;2018-04-28
4. Low symmetry phases of (Al, Ga)Sb under low pressure;International Journal of Modern Physics B;2015-04-07
5. Study of Sb template for heteroepitaxial growth of GaSb thin film on Si(111)substrate;Journal of Crystal Growth;2013-09
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