Characterization of bulk AlN crystals with positron annihilation spectroscopy-Reference-Cited by-同舟云学术

Characterization of bulk AlN crystals with positron annihilation spectroscopy

Published:2008-08 Issue:17 Volume:310 Page:3998-4001
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tuomisto F.,Mäki J.-M.,Chemekova T.Yu.,Makarov Yu.N.,Avdeev O.V.,Mokhov E.N.,Segal A.S.,Ramm M.G.,Davis S.,Huminic G.,Helava H.,Bickermann M.,Epelbaum B.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Comprehensive characterization of hydride VPE grown GaN layers and templates

2. Characterization of bulk AlN with low oxygen content

3. Sublimation growth of AlN bulk crystals in Ta crucibles

4. Photoinduced thermal-conductivity changes in aluminum nitride

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