Growth of crack-free AlGaN on selective-area-growth GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Preparation of AlxGa1-xN/GaN heterostructure by MOVPE
2. Growth of Crack-Free and High-Quality AlGaN with High Al Content Using Epitaxial AlN (0001) Films on Sapphire
3. Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE
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