Growth of free-standing GaN layer on Si(111) substrate-Reference-Cited by-同舟云学术

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Growth of free-standing GaN layer on Si(111) substrate

Published:2009-03 Issue:7 Volume:311 Page:1997-2001
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yang Tsung Hsi,Ku Jui Tai,Chang Jet-Rung,Shen Shih-Guo,Chen Yi-Cheng,Wong Yuen Yee,Chou Wu Ching,Chen Chien-Ying,Chang Chun-Yen

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

2. Design of the low-temperature AlN interlayer for GaN grown on Si (111) substrate

3. GaN-based optoelectronics on silicon substrates

4. Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy

5. New approach to the high quality epitaxial growth of lattice‐mismatched materials

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1. Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment;Surface and Coatings Technology;2022-03

2. Separation of III-N partially-coalesced nanowire arrays from Si substrate;Journal of Physics: Conference Series;2021-12-01

3. Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates;Physics of the Solid State;2019-12

4. First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy;Scientific Reports;2019-05-09

5. Nanostructured LED;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018

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