Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Preparation of highly oriented α-In2Se3 thin films by a simple technique
2. Photoluminescence study of γ-In2Se3 epitaxial films grown by molecular beam epitaxy
3. Electrochemical synthesis of photoactive In2Se3 thin films
4. Growth and characterization of a novel In2Se3 structure
5. Structural, optical and electrical properties of In2Se3 thin films formed by annealing chemically deposited Se and vacuum evaporated In stack layers
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2. Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films;Optical Materials;2014-12
3. Element substitution from substrates in Bi2Se3, Bi2Te3and Sb2Te3overlayers deposited by hot wall epitaxy;Semiconductor Science and Technology;2014-08-13
4. Growth of Thin Films for Solar Cells Prepared by Electrostatic Spray Pyrolysis Deposition Method;Journal of The Surface Finishing Society of Japan;2012
5. Growth of γ-In2Se3Thin Films by Electrostatic Spray Pyrolysis Deposition;Japanese Journal of Applied Physics;2011-05-20
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