Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8μm) infrared detection
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm
2. Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range
3. Type II InAs∕GaSb strain layer superlattice detectors with p-on-n polarity
4. Proposal for strained type II superlattice infrared detectors
5. Minority carrier lifetimes in ideal InGaSb/InAs superlattices
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1. Antimony-based Type-II superlattice infrared detectors: An overview;Reference Module in Materials Science and Materials Engineering;2024
2. Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy;Bulletin of the Lebedev Physics Institute;2023-09
3. Strain-balanced InAs/GaSb superlattices used for the detection of VLWIR radiation;Infrared Physics & Technology;2022-05
4. Interface engineered MBE grown InAs/GaSb based type-II superlattice heterostructures;Journal of Alloys and Compounds;2021-12
5. Dual-band unipolar barrier infrared photodetector based on InGaAsSb bulk and type-II InAs/GaSb superlattice absorbers;Journal of Alloys and Compounds;2021-07
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