Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots-Reference-Cited by-同舟云学术

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Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Published:2015-11 Issue: Volume:121 Page:147-151
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Liao Wugang,Zeng Xiangbin^ORCID,Wen Xixing,Chen Xiaoxiao,Wang Wenzhao

Funder

National Natural Science Foundation of China

Special Fund for the Development of Strategic Emerging Industries of Shenzhen, China

Central University

R&D Program of Ministry of Education of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference28 articles.

1. Silicon nanostructures for photonics and photovoltaics;Priolo;Nat. Nanotechnol.,2014

2. Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx: H films;Sahu;Nanoscale Res. Lett.,2011

3. Nanosilicon photonics;Daldosso;Laser Photonics Rev.,2009

4. Band gap engineering of amorphous silicon quantum dots for light-emitting diodes;Park;Appl. Phys. Lett.,2001

5. Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SiH4;Kim;Appl. Phys. Lett.,2005

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