Electronic and structural characterization of InN heterostructures grown on β-LiGaO2 (001) substrates-Reference-Cited by-同舟云学术

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Electronic and structural characterization of InN heterostructures grown on β-LiGaO2 (001) substrates

Published:2015-09 Issue: Volume:119 Page:106-111
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Wang Jianli,Pu Long,Tang Gang,Zhang Junting

Funder

NNSFC

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference34 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. InN, latest development and a review of the band-gap controversy

3. Structure and electronic properties of InN and In-rich group III-nitride alloys

4. Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate

5. Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy

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1. High-Pressure Near-Infrared Luminescence Studies of Fe³⁺-Activated LiGaO₂;Inorganic Chemistry;2023-07-27

2. Anisotropic photoluminescence of β-LiGaO2 crystal;Optical Materials;2022-10

3. Use of group 13 aryloxides for the synthesis of green chemicals and oxide materials;Dalton Transactions;2022

4. Strain dependent electronic structure and optical properties tuning of InN/PtX2 (X=S, Se) van der waals heterostructures;Vacuum;2019-10

5. Tunable electronic and optical properties of arsenene/MoTe2 van der Waals heterostructures;Vacuum;2019-05

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