Morphology and resistivity of Al thin films grown on Si (111) by molecular beam epitaxy-Reference-Cited by-同舟云学术

Morphology and resistivity of Al thin films grown on Si (111) by molecular beam epitaxy

Published:2005-08 Issue:3-4 Volume:79 Page:178-185
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Joshi Niraj,Debnath A.K.,Aswal D.K.,Muthe K.P.,Senthil Kumar M.,Gupta S.K.,Yakhmi J.V.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference17 articles.

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4. Aswal DK, Debnath AK, Joshi N, Muthe KP, Gupta, SK, Yakhmi JV. International conference on advances in surface treatment: research and applications (ASTRA-2003); 2003.

5. In situ X-ray photoelectron spectroscopy of Ag/Al bilayers grown by molecular beam epitaxy

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