Effect of some metallic impurities on the density of localized states in a-Se80Te20 thin films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference24 articles.
1. Electrical transport in n-type semiconducting Ge120BixSe70−xTe10 glasses
2. Electrical properties of glasses in the GeBiSbSe and GeBiS systems
3. Electrical properties of n-type semiconducting chalcogenide glasses in the system Pb-Ge-Se
4. Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniques
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4. Kinetic parameters of glass transition and crystallization for glassy Se and glassy Se98M2 (M=In, Sb and Sn) alloys;Materials Chemistry and Physics;2012-06
5. Effect of zinc incorporation on the density of defect states in a-Se_{85}Te_{15} glassy alloy;Turkish Journal of Physics;2012-01-01
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