Low EOT and oxide traps for p-substrate Ge MOS device with hafnium nitride interfacial layer-Reference-Cited by-同舟云学术

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Low EOT and oxide traps for p-substrate Ge MOS device with hafnium nitride interfacial layer

Published:2020-09 Issue: Volume:179 Page:109479
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Ruan Dun-Bao,Chang-Liao Kuei-Shu,Hsu Wen-Yen,Yi Shih-Han,Lee Yao-Jen

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference19 articles.

1. Silicon device scaling to the sub-10-nm regime;Ieong;Science,2004

2. Material potential and scalability challenges of germanium CMOS;Toriumi,2011

3. Improved electrical characteristics of bulk FinFETs with SiGe super-lattice-like buried channel;Li;IEEE Electron. Device Lett.,2019

4. Ge (100) and (111) N- and P-FETs with high mobility and low-T mobility characterization;Kuzum;IEEE Trans. Electron. Dev.,2009

5. Improved electrical characteristics of ~0.5 nm EOT Ge pMOSFET with GeON interfacial layer formed by NH3 plasma and microwave annealing treatments;Yi;IEEE Electron. Device Lett.,2018

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical characteristics of Si0.7Ge0.3/Si heterostructure-based n-type GAA MOSFETs;Microelectronic Engineering;2024-09

2. Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment;IEEE Electron Device Letters;2022-06

3. Enhanced reliability and uniformity for Ge pMOSFET with low temperature supercritical fluid treatment;Surface and Coatings Technology;2021-10

4. Oxygen diffusion barrier on interfacial layer formed with remote NH3 plasma treatment;Surface and Coatings Technology;2021-10

5. Effects of pre- and post-microwave annealing treatments on pGe MOS device;Surface and Coatings Technology;2021-10

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