Effects of pre- and post-microwave annealing treatments on pGe MOS device-Reference-Cited by-同舟云学术

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Effects of pre- and post-microwave annealing treatments on pGe MOS device

Published:2021-10 Issue: Volume:423 Page:127593
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Ruan Dun-Bao,Chang-Liao Kuei-Shu,Liu Chia-Chien,Chien Yu-Hsuan,Lee Yao-Jen

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference39 articles.

1. Material potential and scalability challenges of germanium CMOS;Toriumi,2011

2. Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application;Chen;Surf. Coat. Technol.,2007

3. Improved electrical characteristics of bulk FinFETs with SiGe super-lattice-like buried channel;Li;IEEE Electron Device Lett.,2019

4. Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge;Lee,2013

5. Optimized germanium co-implant with B2H6 PLAD for better advanced PMOS device performance;Liu;Surf. Coat. Technol.,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical characteristics of Si0.7Ge0.3/Si heterostructure-based n-type GAA MOSFETs;Microelectronic Engineering;2024-09

2. Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment;IEEE Electron Device Letters;2022-06

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