Influence of activated polymer on the etching rate of silicon in CF4+H2 plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference21 articles.
1. Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and Its Compounds
2. Behavior of F Atoms and CF2Radicals in Fluorocarbon Plasmas for SiO2/Si Etching
3. Surface production of CF, CF2, and C2 radicals in high-density CF4/H2 plasmas
4. Enhancement of Surface Productions of CF x Radicals by the Addition of H 2 into CF 4 Plasmas
5. Chemical bonds of fluorocarbon films which can be a source of CFx radicals
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1. Optical properties of sputtered fluorinated ethylene propylene and its application to surface-plasmon resonance sensor fabrication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008-11
2. Modeling the reactive ion etching process for the CoO(001) surfaceviafirst principles calculations;Journal of Physics: Condensed Matter;2008-08-01
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