Influence of Ga2O3 addition on transparent conductive oxide films of In2O3–ZnO-Reference-Cited by-同舟云学术

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Influence of Ga2O3 addition on transparent conductive oxide films of In2O3–ZnO

Published:2008-10 Issue:3 Volume:83 Page:561-563
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Tominaga Kikuo,Takada Daisuke,Shimomura Kouji,Suketa Hiroshi,Takita Keisuke,Murai Keiichirou,Moriga Toshihito

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference11 articles.

1. Doping mechanisms of tin‐doped indium oxide films

2. Lats R, Ocker B, Daube C, Daube SN. In: SID international symposium digest of technical papers, vol. 24; 1993. p. 975.

3. Electrical and Optical Properties of Radio-Frequency-Sputtered Thin Films of (ZnO)5In2O3

4. Optimization and Properties of Zn Doped Indium Oxide Films on Plastic Substrate

5. Structural and physical characterisation of transparent conducting pulsed laser deposited In2O3–ZnO thin films

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