Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. Optical models for radio-frequency-magnetron reactively sputtered AlN films
2. Electrical conduction mechanism in silicon nitride and oxy-nitride-sputtered thin films
3. The role of N in the resputtering inhibition of Si in W–Si–N reactively sputtered thin layers
4. Epitaxial and polycrystalline HfNx (0.8⩽x⩽1.5) layers on MgO(001): Film growth and physical properties
5. Growth and physical properties of epitaxial CeN layers on MgO(001)
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