Reinforcement role of GaP nanowires in a ZnO layer prepared by RF sputtering-Reference-Cited by-同舟云学术

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Reinforcement role of GaP nanowires in a ZnO layer prepared by RF sputtering

Published:2017-04 Issue: Volume:138 Page:218-223
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Novák Jozef,Laurenčíková Agáta,Hasenohrl Stanislav,Novotný Ivan,Kováč Jaroslav,Valentin Marian,Kováč Jaroslav

Funder

Science and Technology Assistance Agency

VEGA

Centre of Excellence for New Technologies in Electrical Engineering project

ERDF

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference23 articles.

1. EBL- and AFM-based techniques for nanowires fabrication on Si/SiGe

2. Fabricating sub-100nm conducting polymer nanowires by edge nanoimprint lithography

3. Silicon nanowires by combined nanoimprint and angle deposition for gas sensing applications

4. Synthesis and characterization of ZnO nanowires grown on different seed layers: The application for dye-sensitized solar cells

5. Semiconductor nanowires for 0D and 1D physics and applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanorods and nanocones for advanced sensor applications;Applied Surface Science;2018-12

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