Multiple thickness gate oxides with fluorine implantation for system on chip applications
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference28 articles.
1. On implant-based multiple gate oxide schemes for system-on-chip integration
2. MEMS-based embedded sensor virtual components for system-on-a-chip (SoC)
3. Simultaneous growth of different thickness gate oxides in silicon CMOS processing
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials;Acta Physica Sinica;2013
2. Study of rapid thermal annealing on ultra thin high-k HfO2 films properties for nano scaled MOSFET technology;Microelectronic Engineering;2012-03
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