Structural properties of GaN layers grown on Al 2 O 3 (0001) and GaN/Al 2 O 3 template by reactive radio-frequency magnetron sputter epitaxy
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference26 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
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3. An insulator-lined silicon substrate-via technology with high aspect ratio
4. CO2Conversion with Light and Water by GaN Photoelectrode
5. Enhanced Capability of Photoelectrochemical CO2Conversion System Using an AlGaN/GaN Photoelectrode
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