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Effect of ion bombardment on the chemical properties of crystalline tantalum pentoxide films

  • Published:2019-07 Issue: Volume:165 Page:274-282
  • ISSN:0042-207X
  • Container-title:Vacuum
  • language:en
  • Short-container-title:Vacuum

Author:

Perez Israel,Sosa Víctor,Perera Fidel Gamboa,Elizalde Galindo José Trinidad,Enríquez-Carrejo José L.,Mani González Pierre Giovanni

Funder

National Council of Science and Technology (CONACYT) Mexico

Cátedras CONACYT

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference53 articles.

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2. Thermally robust Ta2O5 capacitor for the 256-Mbit DRAM;Kwon;IEEE Trans. Electron Devices,1996

3. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications;Chaneliere;Mater. Sci. Eng. R Rep.,1998

4. Electrical and material characterization of tantalum pentoxide (Ta2O5) charge trapping layer memory;Chen;Appl. Surf. Sci.,2011

5. Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor;Chaneliere;Electrochem. J. Appl. Phys.,1998
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