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Optical properties of porous GaAs formed by low energy ion implantation

  • Published:2020-01 Issue: Volume:171 Page:108976
  • ISSN:0042-207X
  • Container-title:Vacuum
  • language:en
  • Short-container-title:Vacuum

Author:

Hernández Angélica,Kudriavtsev Yuriy,Salinas-Fuentes Cecilia,Hernández-Gutierrez Carlos,Asomoza Rene

Funder

Mexican National Council for Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference37 articles.

1. Vacuum system design for ion implanters;Hucknall;Nucl. Instrum. Methods B,1991

2. Ion implantation for silicon device manufacturing;Current;J. Vac. Sci. Technol. A,1996

3. Porous structure formation in ion irradiated germanium;Steinbach;Nucl. Instrum. Methods B,2014

4. Photoluminescence of porous silicon layers formed in ion-implanted silicon wafers;Piryatinskii;Tech. Phys. Lett.,2000

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