Effect of threading strain from the interface between P-GaN and an annealed ITO transparent conducting layer to InGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Effect of threading strain from the interface between P-GaN and an annealed ITO transparent conducting layer to InGaN/GaN multiple quantum wells

Published:2020-02 Issue: Volume:172 Page:109035
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Lin Yen-Sheng,Li Ching Ning,Tseng Chun-Lung,Shen Ching-Hsing,Mayer Joachim,Su Shui-Hsiang

Funder

Ministry of Science and Technology, Taiwan

I-Shou University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference31 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. The effect of substrate temperature on the properties of ITO thin films for OLED applications

3. Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN microlens arrays

4. III-nitride blue and ultraviolet photonic crystal light emitting diodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror;Vacuum;2020-12

2. Growth of semi-polar (112¯2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method;Vacuum;2020-04

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