Preparation and characterization of In2O3 films with (111) preferred orientation-Reference-Cited by-同舟云学术

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Preparation and characterization of In2O3 films with (111) preferred orientation

Published:2014-04 Issue: Volume:102 Page:63-66
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Yu Chin-Chung,Yang Kai-Shun,Chang Ho,Lee Jiann-Shing,Lai Jun-Yang,Chuang Pei-Yu,Huang Jung-Chun Andrew,Sun An-Cheng,Wu Fu-Chiao,Cheng Horng-Long

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference16 articles.

1. Transparent conducting oxides for electrode applications in light emitting and absorbing devices;Liu;Superlattices Microstruct,2010

2. Indium-oxide polymorphs from first principles: quasiparticle electronic states;Fuchs;Phys Rev B,2008

3. Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3;King;Phys Rev B,2009

4. Nature of the band gap of In2O3 revealed by first-principles calculations and X-ray spectroscopy;Walsh;Phys Rev Lett,2008

5. High quality ITO thin films grown by dc and RF sputtering without oxygen;Ocal;J Phys D Appl Phys,2010

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1. Realizing the Heteromorphic Superlattice: Repeated Heterolayers of Amorphous Insulator and Polycrystalline Semiconductor with Minimal Interface Defects;Advanced Materials;2023-03-31

2. High-quality transparent conductive indium oxide film deposition by reactive pulsed magnetron sputtering: Determining the limits of substrate heating;Applied Surface Science;2022-05

3. Effects of lattice mismatches in In2O3/substrate structures on the structural, morphological and electrical properties of In2O3 films;Surfaces and Interfaces;2020-09

4. Role of Si Incorporation on the Transparent Conducting Properties of In2O3 Thin Films;Journal of Electronic Materials;2020-01-07

5. Stabilization of the β-phase Bi2O3(201) thin film by an ultrathin Bi(001) seeding layer;Vacuum;2019-11

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