Effect of electrode architecture and process parameters on distribution of SiH3 in a PECVD system

Author:

Ding Jianning,Zhao Yazhi,Yuan Ningyi,Chen Mingming,Wang Shubo,Ye Feng,Kan Biao

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference11 articles.

1. High-rate growth of microcrystalline silicon films using a high-density SiH4-H2 glow-discharge plasma;Chisato;Thin Solid Films,2004

2. Simulations of the gas flux distribution for different gas showers and filament geometries on the large-area deposition of amorphous silicon by hot-wire CVD;Pfl ger;J Non-Cryst Solids,2002

3. Simulation and optimization of silicon thermal CVD through CFD integrating Taguchi method;Cheng;Chem Eng J,2008

4. Effect of electrode architecture on the growth and material properties of silicon thin film;Hou;Chin J Semi,2005

5. Modified electrode architecture for efficient and air-stable polymer solar cells based on P3HT: PCBM;Seok-;J Photoch Photobio A Chem,2008

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