Effect of the hydrogen and argon ion-beam treatments on the structural and electrical properties of Cz Si wafers: Comparative study-Reference-Cited by-同舟云学术

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Effect of the hydrogen and argon ion-beam treatments on the structural and electrical properties of Cz Si wafers: Comparative study

Published:2009-05 Issue: Volume:83 Page:S99-S102
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Zinchuk O.,Drozdov N.,Fedotov A.,Mazanik A.,Krekotsen N.,Ukhov V.,Partyka J.,Węgierek P.,Kołtunowicz T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference9 articles.

1. Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

2. Hydrogen passivation of multicrystalline silicon solar cells

3. Formation of deep p-n junctions in p-type Czochralski grown silicon by hydrogen plasma treatment

4. The History, Physics, and Applications of the Smart-Cut® Process

5. Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation

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4. Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes;Acta Physica Polonica A;2017-08

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