Highly-ordered ripple structure induced by normal incidence sputtering on monocrystalline GaAs (001): ion energy and flux dependence
Author:
Funder
CSIR
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. Fabrication of GaAs Devices;Baca,2009
2. Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering
3. Atomic View of Surface Self‐Diffusion: Tungsten on Tungsten
4. Step Motion on Crystal Surfaces
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