The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC-Reference-Cited by-同舟云学术

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The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC

Published:2016-07 Issue: Volume:129 Page:161-165
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Thabethe T.T.,Hlatshwayo T.T.,Njoroge E.G.,Nyawo T.G.,Malherbe J.B.

Funder

National Research Foundation

NRF

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference23 articles.

1. Applications of Silicon Carbide for High Temperature Electronics and Sensors;Shields,1996

2. The VLSI Handbook;Neudeck,2007

3. Interfacial reactions and mechanical properties of W–SiC in-situ joints for plasma facing components

4. High-Temperature Mechanical Property Improvements of SiC Ceramics by NITE Process

5. Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide

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1. Irradiation with phosphorus ions modifies the structure and tunable band-gap of a hexagonal AlN thin film;Applied Physics A;2021-08-28

2. W/TaC/SiC sandwich stack for high temperature applications;Ceramics International;2019-12

3. TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature;Thin Solid Films;2019-01

4. Synthesis, characterization and field emission properties of SiC nanowires prepared by chemical vapor reaction;Vacuum;2017-12

5. Surface and interface structural analysis of W deposited on 6H–SiC substrates annealed in argon;RSC Advances;2017

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