Surface and interface structural analysis of W deposited on 6H–SiC substrates annealed in argon-Reference-Cited by-同舟云学术

Surface and interface structural analysis of W deposited on 6H–SiC substrates annealed in argon

Published:2017 Issue:1 Volume:7 Page:2-7
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Thabethe T. T.¹²³⁴,Njoroge E. G.¹²³⁴,Hlatshwayo T. T.¹²³⁴,Ntsoane T. P.⁵⁶⁴,Malherbe J. B.¹²³⁴

Affiliation:

1. Department of Physics

2. University of Pretoria

3. Pretoria

4. South Africa

5. South African Nuclear Energy Corporation SOC Limited

6. Pretoria 0001

Abstract

A study of a tungsten (W) thin film deposited on a single crystalline 6H–SiC substrate and annealed in Ar at temperatures of 700 °C, 800 °C, 900 °C and 1000 °C for 1 hour was conducted.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C6RA24825J

Reference31 articles.

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2. Annealing behaviour and transient high-heat loading performance of different grade fine-grained tungsten

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4. A Novel Tungsten–Nickel Alloy Ohmic Contact to SiC at 900 $^{\circ}\hbox{C}$

5. Diffusion Bonding Technology of Tungsten and SiC/SiC Composites for Nuclear Applications

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