Growth of GaN on sputtered GaN buffer layer via low cost and simplified sol–gel spin coating method-Reference-Cited by-同舟云学术

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Growth of GaN on sputtered GaN buffer layer via low cost and simplified sol–gel spin coating method

Published:2015-09 Issue: Volume:119 Page:119-122
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Fong C.Y.,Ng S.S.,Yam F.K.,Abu Hassan H.,Hassan Z.

Funder

Ministry of Science, Technology and Innovation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference28 articles.

1. Analysis of two-step-growth conditions for GaN on an AIN buffer layer;Sasaki;J Appl Phys,1995

2. Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy;Wong;Thin Solid Films,2011

3. The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD;Luo;Superlattice Microst,2008

4. Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth;Yoon;Thin Solid Films,2009

5. The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates;Gagnon;J Cryst Growth,2014

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1. Epitaxy of single-crystalline GaN films on novel Ca3Ta(Ga0.5Al0.5)3Si2O14 substrates by metal-organic chemical vapor deposition;Vacuum;2023-01

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3. Fabrication of GaN nanocrystalline thin films Schottky metal-semiconductor-metal ultraviolet photodetectors;Optik;2022-09

4. Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics;Computational Materials Science;2022-02

5. Direct growth of GaN on sapphire substrate via polarity transition from N- to Ga-polar using only hydride vapor phase epitaxy;Japanese Journal of Applied Physics;2021-12-15

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