Influence of annealing on the structural and optical properties of gallium oxide films deposited on c-sapphire substrate-Reference-Cited by-同舟云学术

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Influence of annealing on the structural and optical properties of gallium oxide films deposited on c-sapphire substrate

Published:2019-09 Issue: Volume:167 Page:6-9
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Wu Jianwen,Mi Wei,Yang Zhengchun,Chen Yuting,Li Peijun,Zhao Jinshi,Zhang Kailiang,Zhang Xingcheng,Luan Chongbiao

Funder

Tianjin Natural Science Foundation

National Natural Science Foundation of China

Tianjin Science and Technology Foundation

China Academy of Engineering Physics

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference32 articles.

1. Hyperfine interactions of 111Cd in Ga2O3;Pasquevich;Phys. Rev. B,1993

2. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor;Matsuzaki;Thin Solid Films,2006

3. Recent progress in transparent oxide semiconductors: materials and device application;Hosono;Thin Solid Films,2007

4. Current status of Ga2O3 power devices;Higashiwaki;Jpn. J. Appl. Phys.,2016

5. High-voltage field effect transistors with wide-bandgap beta-Ga2O3 nanomembranes;Hwang;Appl. Phys. Lett.,2014

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