Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory-Reference-Cited by-同舟云学术

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Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory

Published:2019-08 Issue: Volume:166 Page:226-230
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Gan Kai-Jhih,Liu Po-Tsun,Lin Sheng-Jie,Ruan Dun-Bao,Chien Ta-Chun,Chiu Yu-Chuan,Sze Simon M.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference41 articles.

1. Scaling down the interpoly dielectric for next generation Flash memory: Challenges and opportunities

2. Resistance random access memory

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