Epitaxial growth and characterization of high quality In2O3 films on a-plane sapphire substrates by MOCVD-Reference-Cited by-同舟云学术

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Epitaxial growth and characterization of high quality In2O3 films on a-plane sapphire substrates by MOCVD

Published:2019-09 Issue: Volume:167 Page:1-5
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Du Xuejian,Yu Jing,Xiu Xianwu,Sun Qianqian,Tang Wei,Man Baoyuan

Funder

Shandong Province Natural Science Foundation

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference29 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Direct observation of electrostatically driven band gap renormalization in a degenerate perovskite transparent conducting oxide;Lebens-Higgins;Phys. Rev. Lett.,2016

3. Exploring the Leidenfrost effect for the deposition of high-quality In2O3 layers via spray pyrolysis at low temperatures and their application in high electron mobility transistors;Isakov;Adv. Funct. Mater.,2017

4. Modulation-doped In2O3/ZnO heterojunction transistors processed from solution;Khim;Adv. Mater.,2017

5. High-performance on-chip supercapacitors based on mesoporous silicon coated with ultrathin atomic layer-deposited In2O3 films;Zhu;ACS Appl. Mater. Interfaces,2018

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