Analysis of a-SiCN:H films by X-ray photoelectron spectroscopy
Author:
Funder
German Research Foundation
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference31 articles.
1. Leakage current mechanisms and their dependence on composition in silicon carbonitride thin films;Vijayakumar;Mater. Res. Express,2015
2. An insight into the structure–property relationships of PECVD SiCxNy(O):H materials;Coustel;Microporous Mesoporous Mater.,2014
3. Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities;Peter;J. Appl. Phys.,2010
4. The affinity of Si–N and Si–C bonding in amorphous silicon carbon nitride (a-SiCN) thin film;Chen;Diam. Relat. Mater.,2005
5. Atmospheric pressure plasma CVD of amorphous hydrogenated silicon carbonitride (a-SiCN: H) films using triethylsilane and nitrogen;Guruvenket;Plasma Process. Polym.,2011
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