Formation of radiation defects in silicon at high-energy implantation-Reference-Cited by-同舟云学术

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Formation of radiation defects in silicon at high-energy implantation

Published:2005-05 Issue:2-4 Volume:78 Page:251-254
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Brinkevich D.I.,Odzhaev V.B.,Prosolovich V.S.,Yankovski Yu.N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference7 articles.

1. Ion beams in silicon processing and characterization

2. Posselt M, Scorupa W. EMP-87: Energy pulse and particle beam modification mater: Int Conf Dresden 1987. Berlin: 1988. p. 146.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. POLYIMIDE FILMS IMPLANTED BY MANGANESE IONS;HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES;2024-04-24

2. Ion Implantation in Diazoquinone–Novolac Photoresist;High Energy Chemistry;2022-07-26

3. Defect formation in silicon implanted with ∼1 MeV/nucleon ions;Inorganic Materials;2010-11-25

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