Comparison of models for silicon etching in CF4 + O2 plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. Surface processes in CF4/O2reactive etching of silicon
2. Effects of ion bombardment in plasma etching on the fluorinated silicon surface layer: Real‐time and postplasma surface studies
3. The passivation layer formation in the cryo-etching plasma process
4. In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process
5. Plasma–surface interactions in fluorocarbon etching of silicon dioxide
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3. Statistical insights into the reaction of fluorine atoms with silicon;Scientific Reports;2020-08-12
4. Size‐controllable fabrication of nano‐to‐microstructures on silicon surface using high‐density ion etching with pulsed bias;Micro & Nano Letters;2014-09
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