Sub-20 nm GaAs junctionless FinFET for biosensing application-Reference-Cited by-同舟云学术

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Sub-20 nm GaAs junctionless FinFET for biosensing application

Published:2019-02 Issue: Volume:160 Page:467-471
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Chhabra Anuj^ORCID,Kumar Ajay,Chaujar Rishu

Funder

University Grants Commission

Electrical Engineering Department

Microelectronics Research Lab

Delhi Technological University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference21 articles.

1. Dielectric modulated overlapping gate-on-drain tunnel-FET as a label-free biosensor

2. Poly-silicon nanowire field-effect transistor for ultrasensitive and label-free detection of pathogenic avian influenza DNA

3. Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein

4. Analysis of novel transparent gate recessed channel (TGRC) MOSFET for improved analog behaviour

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An embedded gate gate-all-around FinFET for biosensing application;Micro and Nanostructures;2024-11

2. Revolutionizing Semiconductor Technology: A Comprehensive Review of FinFET;2024 International Conference on Communication, Computer Sciences and Engineering (IC3SE);2024-05-09

3. Insights into the design principles of JF-ED-VTFET for biosensing application;Physica Scripta;2024-03-14

4. Biomolecule detection using GaAs_1−xSb_X FET based dielectric modulated label-free biosensor;Physica Scripta;2024-01-22

5. FinFET to GAA MBCFET: A Review and Insights;IEEE Access;2024

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