Effect of post-annealing on laser-ablation deposited WS 2 thin films
Author:
Funder
PolyU
UGC, HKSAR
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference19 articles.
1. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors;Zhu;Phys. Rev. B,2011
2. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2;Zhao;ACS Nano,2013
3. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides;Xiao;Phys. Rev. Lett.,2012
4. Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers;Tongay;Nano Lett.,2014
5. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics;Georgious;Nat. Nanotechnol.,2013
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3. The effects of post-annealing technology on crystalline quality and properties of hexagonal boron nitride films deposited on sapphire substrates;Vacuum;2022-05
4. Optimisation of processing conditions during CVD growth of 2D WS2 films from a chloride precursor;Journal of Materials Science;2022-01
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