Barrier properties of Ta–Si–N films in Ag-and Au-containing metallization-Reference-Cited by-同舟云学术

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Barrier properties of Ta–Si–N films in Ag-and Au-containing metallization

Published:2004-05 Issue:2 Volume:74 Page:195-199
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Kuchuk A.V.,Ciosek J.,Piotrowska A.,Kaminska E.,Wawro A.,Lytvyn O.S.,Nowicki L.,Ratajczak R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference12 articles.

1. Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal)

2. Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations

3. Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations

4. Analysis of Ti–Si–N diffusion barrier films obtained by r.f. magnetron sputtering

5. Evaluation of tantalum silicide sputtering target materials for amorphous Ta–Si–N diffusion barrier for Cu metallization

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2. Ni-Based Ohmic Contacts ton-Type 4H-SiC: The Formation Mechanism and Thermal Stability;Advances in Condensed Matter Physics;2016

3. Fabrication of Ta–Si–N/Ag nanocomposite thin films with near-zero temperature coefficient of resistance;Journal of Alloys and Compounds;2015-08

4. ALD Zirconium Oxide (ZrO2) Thin Films Mechanical/Structural Properties for High-Tech Applications;ECS Journal of Solid State Science and Technology;2015

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