Can Si(113) wafers be an alternative to Si(001)?-Reference-Cited by-同舟云学术

Can Si(113) wafers be an alternative to Si(001)?

Published:2001-05 Issue:1-2 Volume:56 Page:195-203
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Müssig H.-J.,Dabrowski J.,Ehwald K.-E.,Gaworzewski P.,Huber A.,Lambert U.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. International Technology Roadmap for Semiconductors, 1998 Update.

2. Atomic Structure of Clean Si(113) Surfaces: Theory and Experiment

3. Surface reconstruction suggests a nucleation mechanism in bulk: Sb/Si(113) and {113} planar defects

4. K.E. Ehwald et al., IEDM Technical Digest (1999) 564.

5. Theory of the scanning tunneling microscope

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Roughness Analysis of High-Index Silicon Wafers Using KOH-IPA Solutions;ECS Journal of Solid State Science and Technology;2021-01-14

2. Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires;Nano Letters;2015-06-11

3. Influence of temperature on the controlled growth kinetics and superstructural phase formation of indium on a reconstructed Si (113) 3 × 2 surface;Materials Research Express;2014-02-26

4. Characterization of Monolayer Oxide Formation Processes on High-Index Si Surfaces by Photoelectron Spectroscopy with Synchrotron Radiation;Applied Physics Express;2013-11-01

5. Adding effects of Ni and Mn on electromagnetic interference (EMI) shield of Sn-based architectural materials;Transactions of Nonferrous Metals Society of China;2013-09