Hydrogen thermal stability in buried oxides of SOI structures-Reference-Cited by-同舟云学术

Hydrogen thermal stability in buried oxides of SOI structures

Published:1999-09 Issue:1-4 Volume:48 Page:359-362
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ballutaud D.,Boutry-Forveille A.,Nazarov A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Silicon-on-Insulator Technology: materials to VLSI;Colinge,1991

2. Physical and Technical Problems of SOI Structures and Devices;Givargizov,1994

3. Impurity-defect interaction in polycrystalline silicon for photovoltaic applications. The role of hydrogen

4. Electron spin resonance study of hydrogenation effects in polycrystalline silicon

5. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface

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1. Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers;Semiconductor physics, quantum electronics and optoelectronics;2008-07-30

2. CdSSe quantum dots: effect of the hydrogen RF plasma treatment on exciton luminescence;Physica E: Low-dimensional Systems and Nanostructures;2004-05

3. Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment;Semiconductor Physics, Quantum Electronics and Optoelectronics;2003-06-16

4. Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures;Progress in SOI Structures and Devices Operating at Extreme Conditions;2002

5. Radio frequency plasma annealing of positive charge generated by Fowler–Nordheim electron injection in buried oxides in silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000