Large diameter silicon technology and epitaxy-Reference-Cited by-同舟云学术

Large diameter silicon technology and epitaxy

Published:1999-07 Issue:2-3 Volume:45 Page:101-111
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Yamagishi H.,Kuramoto M.,Shiraishi Y.,Machida N.,Takano K.,Takase N.,Iida T.,Matsubara J.,Minami H.,Imai M.,Takada K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. The National Tech. Road Map for Semiconductors, Semiconductor Industry Association, US, 1997.

2. CZ crystal growth development in super silicon project;Yamagishi,1996

3. CZ crystal growth development in super silicon project, Gettering and Defect Engineering in Semiconductor Technology 1997;Yamagishi,1997

4. Research and development of super silicon wafers, Semiconductor Silicon 1988;Takada,1998

5. ‘Thermal environment prediction for silicon crystal growth of up to 16-inch diameters in Czochralski furnaces’;Takano;Jpn. J. Appl. Phys.,1997

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