Heterostructures on InP substrate for high-speed detection devices over a large spectral range (0.8

Heterostructures on InP substrate for high-speed detection devices over a large spectral range (0.8–1.6 μm)

Published:2000-05 Issue: Volume:51-52 Page:393-400
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Budianu Elena,Purica Munizer,Rusu Emil

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Tien-Pei, C. Burrus, A. Dentai, InGaAs/InP p–i–n photodiodes for lightwave communications at the 0.95–1.65 μm wavelength, IEEE J. Quantum Electronics QE-17(2) (Feb. 1981) 232–239.

2. D. Wake, L.C. Blank, R.H. Walling, I.D. Henning, Top-illuminated InGaAs/InP p–i–n photodiodes with a 3-dB bandwidth in excess of 26 GHz, IEEE Electron Devices Lett. EDL-9 (May 1988) 226–228.

3. S.R. Forrest, Fast-response pin/preamplifier photoreceiver monolithically integrated on GaAs substrates, IEEE J. Quantum Electronics QE-17(2) (Feb. 1981) 217–226.

4. R.F. Leheny, R.E. Nahory, M.A. Pollack, E.D. Beebe, J. Christian De Winter, Characterisation of InGaAs photodiodes exhibiting low dark current and low junction capacitance, IEEE J. Quantum Electronics QE-17(2) (Feb. 1981) 227–231.

5. G. George, J.P. Krusius, Dynamic response of high speed pin and Schottky barrier photodiode layers to nonuniform optical illumination, J. Lightwave Technol. 12(8) (Aug. 1994) 1387–1393.

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