A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs-Reference-Cited by-同舟云学术

A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs

Published:2001-11 Issue:1-4 Volume:59 Page:429-433
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kumar Aatish,Lal Rakesh,Rao V.Ramgopal

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Making silicon nitride film a viable gate dielectric;Ma;IEEE Trans. Electron. Dev.,1998

2. 100-nm channel length MNSFETs using a Jet Vapor Deposited Ultra-thin Silicon Nitride Dielectric;Mahapatra,1999

3. A. Kumar, S. Mohapatra, R. Lal, V. Ramgopal Rao, Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFET’s, Microelectron. Rel., to be published.

4. Determination of interface state density in small-geometry MOSFET’s by high-low frequency transconductance method;Chen;IEEE Electron Dev. Lett.,1991

5. Measurements of interface state density in partially and fully-depleted silicon-on-insulator MOSFETs by a high-low-frequency transconductance method;Yang;Solid State Electron.,1992

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