Carrier transport properties of thin gate oxides after soft and hard breakdown-Reference-Cited by-同舟云学术

Carrier transport properties of thin gate oxides after soft and hard breakdown

Published:2001-11 Issue:1-4 Volume:59 Page:5-15
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Takagi Shin-ichi,Takayanagi Mariko

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

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3. Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown;Houssa;J. Appl. Phys.,1998

4. On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers;Crupi;IEEE Trans. Electron. Devices,1998

5. J. Sune, E. Miranda, M. Nafria, X. Aymerich, Point contact conduction at the oxide breakdown of MOS devices, Tech. Dig. IEDM (1998) 191–194.

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