Application of atomic force microscopy to detect edge of mask contaminations that may hinder titanium silicide formation-Reference-Cited by-同舟云学术

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Application of atomic force microscopy to detect edge of mask contaminations that may hinder titanium silicide formation

Published:2003-11 Issue:2-4 Volume:70 Page:196-200
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Bresolin C.,Pesaturo M.,Paruzzi P.,Soncini V.,Erbetta D.,Bigi M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Suppression of Titanium Disilicide Formation on Heavily Arsenic-Doped Silicon Substrate

2. Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum

3. Effect of preamorphization implantation on C54–TiSi2 formation in salicided narrow lines

4. Initial reactions in Ti–Si bilayers: New indications from in situ measurements

5. Impurity effects in transition metal silicides

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