Simple simulation of electron-beam lithography for fabricating sub-0.2 μm T-shaped gates based on a two-layer resist system-Reference-Cited by-同舟云学术

Simple simulation of electron-beam lithography for fabricating sub-0.2 μm T-shaped gates based on a two-layer resist system

Published:1998-07 Issue:2 Volume:40 Page:77-83
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Xu D

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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3. A Review of GaAs MESFET Gate Electrode Fabrication Technologies

4. Exposure and development models used in electron beam lithography

5. Fabrication limits of nanometer T and Γ gates: Theory and experiment

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation and evolutionary optimization of electron-beam lithography with genetic and simplex-downhill algorithms;IEEE Transactions on Evolutionary Computation;2003-02

2. Effect of resist sensitivity ratio on T-gate fabrication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001

3. Evolutionary optimization of the electron-beam lithography process for gate fabrication of high electron mobility transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000