Evolutionary optimization of the electron-beam lithography process for gate fabrication of high electron mobility transistors
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stepping electron-beam lithography for Y-gate in high electron mobility transistors fabrication;Microelectronic Engineering;2022-04
2. Process for 20 nm T gate on Al[sub 0.25]Ga[sub 0.75]As∕In[sub 0.2]Ga[sub 0.8]As∕GaAs epilayer using two-step lithography and zigzag foot;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
3. Simulation and evolutionary optimization of electron-beam lithography with genetic and simplex-downhill algorithms;IEEE Transactions on Evolutionary Computation;2003-02
4. Effect of resist sensitivity ratio on T-gate fabrication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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