Optical properties of Si+-ion implanted sol–gel derived SiO2 films-Reference-Cited by-同舟云学术

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Optical properties of Si+-ion implanted sol–gel derived SiO2 films

Published:2000-01 Issue: Volume:69-70 Page:564-569
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Dian J,Valenta J,Luterová K,Pelant I,Nikl M,Muller D,Grob J.J,Rehspringer J.-L,Hönerlage B

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Visible photoluminescence in Si+‐implanted thermal oxide films on crystalline Si

3. Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing

4. Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films

5. Room‐temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers

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1. Synthesis of sol–gel SiO2-based materials using alkoxydisilane precursors: mechanisms and luminescence studies;Journal of Sol-Gel Science and Technology;2014-11-05

2. Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors;Applied Physics Letters;2012-10-22

3. Correlation between silicon nanocrystalline size effect and spectroscopic ellipsometry responses;Thin Solid Films;2004-05

4. Optical study of Si nanocrystals in Si/SiO2 layers by spectroscopic ellipsometry;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-02

5. Optical activation of Er ions by Si nanocrystals in films synthesized by sol-gel chemistry and ion implantation;Journal of Materials Science: Materials in Electronics;2003

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